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savantic semiconductor product specification silicon pnp power transistors 2SB506 description with to-3 package wide area of safe operation applications low frequency power amplification power switching application pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -7 v i c collector current -5 a p c collector power dissipation t c =25 60 w t j junction temperature 100 t stg storage temperature -55~100 fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB506 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -7 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.0 v v besat base-emitter saturation voltage i c =-5a; i b =-0.5a -1.5 v i cbo collector cut-off current v cb =-100v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-7v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-5v 35 200 f t transition frequency i c =-0.3a ; v ce =-10v 20 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB506 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm) downloaded from: http:///

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